Surface Treatment Effect of (NH4)2Sx on $ p$-type GaAs Field Emitter Arrays

スポンサーリンク

概要

• 論文の詳細を見る

• Uniform GaAs field emitter arrays (FEAs) with sharp tips for a field emission electron source were obtained by wet chemical etching method. The surface of the GaAs tips were passivated by sulfur atoms by dipping it into (NH4)2Sx combined with subsequent ultra high vacuum (UHV) annealing and was characterized by X-ray photoelectron spectroscopy (XPS). Using the GaAs FEAs with sulfur passivation, emission current with a saturation characteristic was obtained.

• 2007-08-25

著者

• SHIMOMURA Masaru

  Graduate School of Agriculture, Kinki University

• Han Gui

  Graduate School of Electronic Science and Techonology, Shizuoka University

• Mimura Hidenori

  Graduate School Electronic Science And Technology

• Liu Xin

  Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

• Shimomura Masaru

  Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

• Takigawa Yoshihito

  Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

• Neo Yoichiro

  Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

• Han Gui

  Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

• Mimura Hidenori

  Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

関連論文

• Super Agonist Actions of Clothianidin and Related Compounds on the SADβ2 Nicotinic Acetylcholine Receptor Expressed in Xenopus laevis Oocytes
• Preparation and cathodoluminescence of nanostructured ZnO materials
• X-Ray Imaging Sensor Using a Polycrystalline Cadmium Telluride-Hydrogenated Amorphous Silicon Heterojunction
• Optoelectrical Properties of Hydrogenated Amorphous Silicon-Polycrystalline Cadmium Telluride Heterojunctions
• Amorphous Silicon Resistive Sea for Silicon Vidicon Targets
• Electrical Properties of p-Type Hydrogenated Amorphous Silicon-n-Type Crystalline Gallium Arsenide Heterojunctions
• Surface Treatment Effect of (NH4)2Sx on $ p$-type GaAs Field Emitter Arrays
• Reverse Current Characteristics of Hydrogenated Amorphous Silicon-Crystalline Silicon Heterojunctions
• Soft X-Ray Image Sensor Using Hydrogenated Amorphous Silicon
• Spot Size Converter with Vertically Tapered Waveguide Core Fabricated by Sputter Etching

スポンサーリンク