Ultrafast Photoconductive Detectors Based on Semi-Insulating GaAs and InP

概要

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Photoconductive dipole antennas fabricated on semi-insulating (SI) GaAs and SI-InP were used to detect terahertz (THz) pulses. The responses of these long-carrier-lifetime photoconductive detectors were compared to that of the photoconductive antenna fabricated on a low-temperature grown GaAs (LT-GaAs) with a subpiconsecond carrier lifetime. The SI-InP-based photoconductive detector showed a higher responsivity and a better signal-to-noise ratio (SNR) than the LT-GaAs-based photoconductive detector at low gating laser powers. The SI-GaAs-based detector, however, showed a responsivity comparable to that of the LT-GaAs photoconductive detector only at very weak gating laser power, and the SNR of the SI-GaAs-based detector was poor for overall gating laser powers due to the high background noise originating from a large amount of stray photocurrent.
社団法人応用物理学会の論文
1997-09-15