A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance(Special lssue on Silicon RF Device & Integrated Circuit Technologies)
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概要
- 論文の詳細を見る
For wireless communication, a low-voltage monolithic LC-tank CMOS voltage-controlled-oscillator (VCO) is developed with 0.2-μm fully-depleted silicon-on-insulator (SOI) CMOS process technology. The VCO features a double-tuning technique to achieve a wide tuning range with lateral p-n junction varactors. The VCO has the following features at the supply voltage of 1.5 V: (1) Output frequency range from 1.07 GHz to 1.36 GHz, (2) Third-harmonic below -37 dBc, and (3) Phase noise of -120 dBc/Hz at 1 MHz offset frequency.
- 社団法人電子情報通信学会の論文
- 2002-07-01
著者
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Shima Hideki
Department Of Radiology Teikyo University School Of Medicine
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Shima Hideki
The Graduate School Of Engineering Osaka University:(present Address)texas Instruments Japan Ltd.
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Shima Hideki
Department Of Biotechnology Faculty Of Engineering Osaka Univesity
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Matsuoka Toshimasa
Department Of Electronic Engineering Osaka University
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Matsuoka T
Osaka Univ. Osaka Jpn
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Matsuoka Toshimasa
The Graduate School Of Engineering Osaka University
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NAKAMURA Mitsuo
Department of Advanced Material Science, Faculty of Engineering, Kagawa University
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Taniguchi K
Department Of Electronics And Information Systems Osaka University
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Taniguchi K
Division Of Electrical Electronics And Information Engineering Graduate School Of Engineering Osaka
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Shima Hideki
Department Of Applied Physics Graduate School Of Engineering Yokohama National University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Nakamura Mitsuo
Department Of Advanced Material Science Faculty Of Engineering Kagawa University
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Nakamura Mitsuo
Department Of Electronics And Information Systems Osaka University
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Matsuoka Toshimasa
Department of Electrical, Electronic and Information Engineering, Osaka University
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