Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Matsuoka Toshimasa
Department Of Electronic Engineering Osaka University
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Matsuoka Toshimasa
Department Of Electronics And Information Systems Osaka University
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TADA Kenshi
Department of Electronics and Information Systems, Osaka University
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MAEDA Kazuhiro
Development Engineering Department, System-LCD Division 1, Mobile-LCD Group, SHARP CORPORATION
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SAKAI Tamotsu
Development Engineering Department, System-LCD Division 1, Mobile-LCD Group, SHARP CORPORATION
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KUBOTA Yasushi
Development Engineering Department, System-LCD Division 1, Mobile-LCD Group, SHARP CORPORATION
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IMAI Shigeki
Advanced Technology Development Center, Integrated Circuits Group, SHARP CORPORATION
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