Kitahara Kuninori | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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Kitahara Kuninori
Fujitsu Laboratories Ltd.
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Ozeki Masashi
Fujitsu Laboratories Ltd.
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Ozeki Masashi
Fujitsu Laboratories
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Kitahara K
Interdisciplinary Faculty Of Science And Engineering Shimane University
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Kodama K
Chitose Inst. Sci. And Technol. Hokkaido Jpn
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Ozeki M
Fujitsu Laboratories Ltd.
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Ozeki Masashi
Fujitsu Laboratories Lid.
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KODAMA Kunihiko
Fujitsu Laboratories Limited
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Hoshino M
Fujitsu Laboratories Ltd.
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HOSHINO Masataka
Fujitsu Laboratories Ltd.
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Hoshino Masataka
Fujitsu Laboratories Lid.
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SHIBATOMI Akihiro
Fujitsu Limited
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NAKAJIMA Kazuo
Fujitsu Laboratories Ltd.
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Shibatomi Akihiro
Fujitsu Laboratories Limited
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Nakajima Kazuo
Fujitsu Laboratories Lid.
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NAKAI Kenya
Fujitsu Laboratories Limited
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Nakai Kenya
Fujitsu Ltd. Fujutsu Laboratories Ltd.
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Nakai Kenya
Fujitsu Laboratories
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Nakai Kenya
Fujitsu Laboratories Ltd.
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OHTSUKA Nobuyuki
Fujitsu Laboratories Ltd.
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Ueda Osamu
Fujitsu Laboratories Ltd.
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Ueda Osamu
Fujitsu Laboratories Lid.
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Okawa Shinji
Fujitsu Ltd. Fujutsu Laboratories Ltd.
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HARA Akito
Fujitsu Laboratories Limited
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Ohkawa Shinji
Fujitsu Laboratories Ltd.
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DAZAI Koichi
Fujitsu Laboratories
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DAZAI Kouichi
Fujitsu Laboratories Ltd.
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Hara Akito
Fujitsu Lab. Ltd.
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SUGA Katsuyuki
Fujitsu Laboratories Limited
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Ueda O
Graduate School Of Biomedical Sciences Hiroshima University
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TAKIKAWA Masahiko
Fujitsu Laboratories Ltd.
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Nakajima Kensuke
Research Institute Of Electrical Communication Tohoku University
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OKABE Masahiro
Fujitsu Laboratories Ltd.
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MATSUMIYA Yasuo
Fujitsu Laboratories Ltd.
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ASHINO Toshihiko
Fujitsu Laboratories Ltd.
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FUNAGURA Makoto
Fujitsu Laboratories Lid.
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RYUZAN Osamu
Fujitsu Laboratories
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Hara A
Fujitsu Laboratories Limited
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Suga Katsuyuki
Fujitsu Laboratories Ltd.
著作論文
- Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
- Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
- Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
- Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
- Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
- Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- Observation of Atomic Steps on Vicinal Si(111) Annealed in Hydrogen Gas Flow by Scanning Tunneling Microscopy
- A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies
- Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation
- Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth
- Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
- Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
- Control of GaAs on Si Interface Using Atomic Layer Epitaxy
- Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
- Observation of Atomic Structure by Scanning Tunneling Microscopy of Vicinal Si(100) Surface Annealed in Hydrogen Gas
- Nondestructive Resistivity Measurement of Semi-Insulating GaAs Using Illuminated n^+-GaAs Contacts
- Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs
- Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs
- Substrate Bias Effect on Ion-Implanted GaAs MESFETs
- Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
- Photo-Ionization Cross Section Measurements of Deep Levels in Iron Doped GaAs