Kodama K | Chitose Inst. Sci. And Technol. Hokkaido Jpn
スポンサーリンク
概要
関連著者
-
Kodama K
Chitose Inst. Sci. And Technol. Hokkaido Jpn
-
Kitahara K
Interdisciplinary Faculty Of Science And Engineering Shimane University
-
Ozeki M
Fujitsu Laboratories Ltd.
-
Ozeki Masashi
Fujitsu Laboratories Ltd.
-
Ozeki Masashi
Fujitsu Laboratories
-
Ozeki Masashi
Fujitsu Laboratories Lid.
-
Kitahara Kuninori
Fujitsu Laboratories Ltd.
-
KODAMA Kunihiko
Fujitsu Laboratories Limited
-
Hoshino M
Fujitsu Laboratories Ltd.
-
HOSHINO Masataka
Fujitsu Laboratories Ltd.
-
Hoshino Masataka
Fujitsu Laboratories Lid.
-
NAKAJIMA Kazuo
Fujitsu Laboratories Ltd.
-
Nakajima Kazuo
Fujitsu Laboratories Lid.
-
OHTSUKA Nobuyuki
Fujitsu Laboratories Ltd.
-
HARA Akito
Fujitsu Laboratories Limited
-
OKABE Masahiro
Fujitsu Laboratories Ltd.
-
Hara A
Fujitsu Laboratories Limited
-
Hara Akito
Fujitsu Lab. Ltd.
-
KOMENO Junji
Fujitsu Laboratories Ltd.
-
Nakajima Kensuke
Research Institute Of Electrical Communication Tohoku University
-
Komeno J
Fujitsu Laboratories Ltd.
-
Ueda Osamu
Fujitsu Laboratories Ltd.
-
Ueda Osamu
Fujitsu Laboratories Lid.
-
TAKIKAWA Masahiko
Fujitsu Laboratories Ltd.
-
Kitahara Kuninori
Department Of Electronic And Control Systems Engineering Shimane University
-
MORITANI Akihiro
Department of Electronic and Control Systems Engineering, Shimane University
-
KITAHARA Kuninori
Deptartment of Electronic and Control Systems Engineering, Shimane University
-
MATSUMIYA Yasuo
Fujitsu Laboratories Ltd.
-
ASHINO Toshihiko
Fujitsu Laboratories Ltd.
-
FUNAGURA Makoto
Fujitsu Laboratories Lid.
-
Kitahara Kuninori
Department Of Electronic And Control System Eng. Shimane University
-
Moritani Akihiro
Department Of Electronic And Control System Eng. Shimane University
-
Moritani Akihiro
Department Of Electronic And Control System Engineering Shimane University
著作論文
- Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
- Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
- Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
- Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
- Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
- Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
- Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies
- Micro-Scale Characterization of Crystalline Phase and Stress in Laser-Crystallized Poly-Si Thin Films by Raman Spectroscopy
- Silicon-Hydrogen Bonds in Laser-Crystallized Polysilicon Thin Films and Their Effects on Electron Mobility
- Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth
- Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
- Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
- Control of GaAs on Si Interface Using Atomic Layer Epitaxy
- Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
- Emission Mechanism in In_Ga_As/InP Quantum-Well Heterostructures Grown by Chloride Vapor-Phase Epitaxy