Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
-
Awano Y
Fujitsu Ltd. Atsugi Jpn
-
Awano Yuji
Fujitsu Laboratories Ltd.
-
Sato Shintaro
Mirai-selete
-
Sakai Tadashi
Mirai-selete
-
Hyakushima Takashi
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
-
KATAGIRI Masayuki
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
-
SAKUMA Naoshi
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
-
SUZUKI Mariko
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
-
NIHEI Mizuhisa
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
-
AWANO Yuji
MIRAI-Selete (Semiconductor Leading Edge Technologies, Inc.)
-
Suzuki Mariko
Mirai-selete
-
Sato Shintaro
Fujitsu Laboratories Ltd.
-
Sakuma Naoshi
Mirai-selete
-
Nihei Mizuhisa
Nanotechnology Research Center Fujitsu Laboratories Ltd.
-
Nihei Mizuhisa
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
-
Awano Yuji
Mirai-selete
-
Katagiri Masayuki
Mirai-selete
-
SAITO Tatsuro
Low-Power Electronics Association and Project (LEAP)
-
Nihei Mizuhisa
MIRAI-Selete
-
Nihei Mizuhisa
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
-
Sakuma Naoshi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Awano Yuji
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
-
Suzuki Mariko
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Sato Shintaro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
-
Sakai Tadashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Katagiri Masayuki
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
Hyakushima Takashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
関連論文
- Phonon Assisted Tunneling and P/V-Ratio in a Magnetic Confined Quasi 0D InGaAs/InAlAs Resonant Tunneling Diode
- InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
- Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
- Phonon Assisted Tunneling and Peak-to-Valley Ratio in a Magnetically Confined Quasi Zero Dimensional InGaAs/InAlAs Resonant Tunneling Diode
- InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Patterned Carbon Nanotube Films Formed by Surface Decomposition of SiC Wafers
- Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
- Electrical properties of carbon nanotubes grown at a low temperature by radical chemical vapor deposition for future LSI interconnects
- Carbon Nanotube Via Technologies for Advanced Interconnect Integration
- Direction-controlled growth of carbon nanotubes (Selected topics in Applied Physics (6) Advances in carbon nanotube applications)