Direct Diameter-Controlled Growth of Multiwall Carbon Nanotubes on Nickel-Silicide Layer
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概要
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By using plasma-enhanced chemical vapor deposition (p-CVD), we grew vertically aligned multiwall carbon nanotubes (CNTs) directly on a nickel-silicide layer, which can be used as electrodes for metal-oxide-semiconductor field-effect transistors (MOSFETs). By using a nickel-silicide layer as a catalyst, the nanotube diameter became smaller than that possible with a nickel film catalyst. We suggest that Ni-silicide composition plays an important role in controlling the diameter of the nanotubes. To our knowledge, this is the first report on diameter-controlled vertically aligned CNT growth on catalytic metal-silicide substrates.
- 2003-06-15
著者
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Awano Yuji
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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KAWABATA Akio
Nanotechnology Research Center, Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Nanotechnology Research Center Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Nanotechnology Research Center, Fujitsu Laboratories Ltd., 10-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
Nanotechnology Research Center, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kawabata Akio
Nanotechnology Research Center, Fujitsu Laboratories Ltd., 10-1 Morinosato-wakamiya, Atsugi, Kanagawa 243-0197, Japan
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