Patterned Carbon Nanotube Films Formed by Surface Decomposition of SiC Wafers
スポンサーリンク
概要
- 論文の詳細を見る
Well-aligned carbon nanotubes (CNTs) have been formed selectively on SiC wafers by a surface decomposition method. A SiC(000-1)C-face wafer was patterned with amorphous SiN deposited by a photoresist method used in the silicon semiconductor process, after which the wafer was heated at 1500°C for half an hour in a vacuum. Transmission electron microscopy revealed that 50-nm-long aligned CNTs were formed only at the open areas of the mask. The mask was removed entirely before reaching 1500°C, and a thin graphite layer 6.8 nm thick was formed at the naked SiC surface. This demonstration of the selective growth of CNTs suggests that this surface decomposition method has the potential to be used for the development of nanotube devices integrated into silicon technology.
- 2003-12-01
著者
-
Fisher Craig
Materials Research And Development Laboratory Japan Fine Ceramics Center
-
Awano Yuji
Nanotechnology Research Center Fujitsu Laboratories Ltd.
-
Honjo Chizuru
Materials Research And Development Laboratory Japan Fine Ceramics Center
-
Nihei Mizuhisa
Nanotechnology Research Center Fujitsu Laboratories Ltd.
-
Kusunoki Michiko
Materials Research And Development Laboratory Japan Fine Ceramics Center
-
Suzuki Toshiyuki
Materials Research And Development Laboratory Japan Fine Ceramics Center
-
Hirayama Tsukasa
Materials R&d Laboratory Japan Fine Ceramics Center
-
Honjo Chizuru
Materials Research and Development Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
-
Nihei Mizuhisa
Nanotechnology Research Center, Fujitsu Laboratories Ltd., 10-1 Morinosato, Wakamiya, Atsugi 243-0197, Japan
-
Awano Yuji
Nanotechnology Research Center, Fujitsu Laboratories Ltd., 10-1 Morinosato, Wakamiya, Atsugi 243-0197, Japan
-
Hirayama Tsukasa
Materials Research and Development Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan
関連論文
- Patterned Carbon Nanotube Films Formed by Surface Decomposition of SiC Wafers
- Critical Current Density-Magnetic Field Curve for Untwinned Orthorhombic Nd_Ba_Cu_3O_ Single Crystal and Its Microstructure
- Effect of Heat Treatment on Critical Current Density-Magnetic Field Curve for YBa_2Cu_3O_ Single Crystal and Its Microstructure
- Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
- Electrical properties of carbon nanotubes grown at a low temperature by radical chemical vapor deposition for future LSI interconnects
- Carbon Nanotube Via Technologies for Advanced Interconnect Integration
- Chemical Modification of Multi-walled Carbon Nanotubes (MWNTs) By Vacuum Ultraviolet (VUV) Irradiation Dry Process
- Diameter-Controlled Growth of Multi-Walled Carbon Nanotubes by Hot-Filament Chemical Vapor Deposition with Ferritin as a Catalyst on a Silicon Substrate
- Influence of Growth Mode of Carbon Nanotubes on Physical Properties for Multiwalled Carbon Nanotube Films Grown by Catalystic Chemical Vapor Deposition
- Carbon nanotube technologies for future ULSI via interconnects
- Direct Diameter-Controlled Growth of Multiwall Carbon Nanotubes on Nickel-Silicide Layer
- Hologram-Shifting Method for High-Speed Electron Hologram Reconstruction
- Effects of the Initial Heat-Treatment Conditions on Microstructures of YbBa_2Cu_3O_lt;7-δ> Superconducting Final Films Deposited on SrTiO_3(001) Substrates by the Dipping-Pyrolysis Process
- Electron Holographic Interference Micrograph of a Single Magnetic-Domain Particle
- Preparation of Y-Cu-O/Ba-Co-O Multilayered Thin Films and Thermal Diffusion Behavior of the Interface
- Fluorine Doping and Superconductivity of Nd_2CuO_4 Thin Films
- A new method for preparing plan-view TEM specimen of multilayered films using focused ion beam
- Rare Earth Substitution Effects and Magnetic Field Dependence of Critical Current in Y_RE_xBa_2Cu_3O_y Coated Conductors with Nanoparticles (RE = Sm, Gd)
- Enhancement of Flux Pinning in Y_Sm_xBa_Cu_3O_y Coated Conductors with Nanoparticles
- Specimen preparation for high-resolution transmission electron microscopy using focused ion beam and Ar ion milling
- Piezoelectric Properties of SrBi_4Ti_4O_-Based Ceramics
- CNT-FETs with High Modulated Drain Current utilizing Size-classified Fe Particles as a Catalyst
- Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
- Performance Estimation of Graphene Field-Effect Transistors Using Semiclassical Monte Carlo Simulation
- Synthesis of a Closely Packed Carbon Nanotube Forest by a Multi-Step Growth Method Using Plasma-Based Chemical Vapor Deposition
- High-Quality Carbon Nanotube Growth at Low Temperature by Pulse-Excited Remote Plasma Chemical Vapor Deposition
- Self-organization of Novel Carbon Composite Structure : Graphene Multi-Layers Combined Perpendicularly with Aligned Carbon Nanotubes
- Direction-Controlled Growth of Carbon Nanotubes
- Evaluation of Thermal Conductivity of a Multi-Walled Carbon Nanotube Using the $\Delta V_{\text{gs}}$ Method
- Chemical Modification of Multiwalled Carbon Nanotubes by Vacuum Ultraviolet Irradiation Dry Process
- Video-Rate Electron-Holographic Interference Microscopy Using a Liquid-Crystal Panel
- Patterned Carbon Nanotube Films Formed by Surface Decomposition of SiC Wafers
- Transmission Electron Microscopic Studies of YbBa_2Cu_3O_ Superconducting Final Films Formed on LaAlO_3(001) Substrates by the Dipping-Pyrolysis Process
- Transmission Electron Microscopic Studies of YbBa_2Cu_3O_-Precursor Films Formed on SrTiO_3 by Dipping-Pyrolysis Process
- Correlation between Anomalous Peak Effect in Magnetic Hysteresis Loop and Nanoscale Structure for NdBa_2Cu_3O_ Single-Crystal Superconductor
- Direct Diameter-Controlled Growth of Multiwall Carbon Nanotubes on Nickel-Silicide Layer
- Transport Properties of Closely-Packed Carbon Nanotubes Film on SiC Tuned by Si-Doping
- Transport Properties of Closely-Packed Carbon Nanotubes Film on SiC Tuned by Si-Doping
- Diameter-Controlled Growth of Multi-Walled Carbon Nanotubes by Hot-Filament Chemical Vapor Deposition with Ferritin as a Catalyst on a Silicon Substrate