Improvement in Electrical Properties of Carbon Nanotube Via Interconnects
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概要
- 論文の詳細を見る
We report on the electrical properties of carbon nanotube (CNT) via interconnects with improvement in contact formations between the CNT via and metal electrodes. For the improvement of the bottom contact formation, a TiN/TaN multilayer on a Cu bottom wiring layer is applied to suppress formation of a highly resistive oxide layer on the TaN barrier layer. The top electrode formation with good coverage on CNTs reduces contact resistance. The current--voltage characteristics of ultrafine CNT via interconnects exhibit ohmic behavior. The resistance of the CNT via interconnect is inversely proportional to the via area, indicating that the CNT bundles are grown with uniform quality and density in various-diameter via holes.
- 2011-05-25
著者
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Sato Shintaro
Mirai-selete
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Sakai Tadashi
Mirai-selete
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Suzuki Mariko
Mirai-selete
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Sakuma Naoshi
Mirai-selete
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Yamazaki Yuichi
Mirai-selete
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WADA Makoto
Corporate Research and Development Center, Toshiba Corporation
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Awano Yuji
Mirai-selete
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Katagiri Masayuki
Mirai-selete
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Nihei Mizuhisa
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Nihei Mizuhisa
MIRAI--Selete, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Kitamura Masayuki
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kajita Akihiro
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kitamura Masayuki
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sakuma Naoshi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sakuma Naoshi
MIRAI--Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Awano Yuji
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Suzuki Mariko
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Suzuki Mariko
MIRAI--Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Kajita Akihiro
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Yamazaki Yuichi
MIRAI--Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sato Shintaro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sakai Tadashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Katagiri Masayuki
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sato Shintaro
MIRAI--Selete, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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