Carbon Nanotube Vias Fabricated by Remote Plasma-Enhanced Chemical Vapor Deposition
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概要
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Multiwalled carbon nanotubes (CNTs) have been grown by remote plasma-enhanced chemical vapor deposition at temperatures as low as 400 °C. In via formation, the selective growth of CNT bundles in via holes at 430 °C and chemical mechanical polishing for planarization have been performed. The electrical evaluation of CNT single vias with various diameters reveals that the via resistance is inversely proportional to the via area. This result indicates that the CNTs are grown with uniform quality and density in the via holes with various diameters and stable contact formations are obtained. Moreover, the resistances of single vias are approximately equivalent to the via resistances estimated from the resistances of via chains, demonstrating the via-to-via uniformity of the CNT vias obtained by the remote plasma-enhanced chemical vapor deposition.
- 2008-04-25
著者
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Sato Shintaro
Mirai-selete
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Sakai Tadashi
Mirai-selete
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Hyakushima Takashi
Mirai-selete (semiconductor Leading Edge Technologies Inc.)
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Suzuki Mariko
Mirai-selete
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Sakuma Naoshi
Mirai-selete
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Awano Yuji
Mirai-selete
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Katagiri Masayuki
Mirai-selete
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Nihei Mizuhisa
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sakuma Naoshi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Awano Yuji
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Suzuki Mariko
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sato Shintaro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sakai Tadashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Katagiri Masayuki
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Hyakushima Takashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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