Low-Temperature Growth of Multiwalled Carbon Nanotubes by Surface-Wave Plasma-Enhanced Chemical Vapor Deposition Using Catalyst Nanoparticles
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概要
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Carbon nanotubes (CNTs) have been grown by surface-wave plasma-enhanced chemical vapor deposition (CVD) using size-classified Co nanoparticles at low temperatures. A mesh grid is used in the remote plasma-enhanced CVD system for the suppression of ion bombardment damage from plasma. The control of the electric field distribution using a mesh grid with a narrower opening is effective for the CNT growth. Multiwalled CNTs are obtained at a low temperature of 400 °C under low ion-density conditions. No significant difference in the microscopic structure of the CNTs grown at temperatures between 400 and 500 °C is observed.
- 2009-09-25
著者
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Sato Shintaro
Mirai-selete
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Sakai Tadashi
Mirai-selete
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Suzuki Mariko
Mirai-selete
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Yamazaki Yuichi
Mirai-selete
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Katagiri Masayuki
Mirai-selete
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Nihei Mizuhisa
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Nihei Mizuhisa
MIRAI-Selete, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sakuma Naoshi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sakuma Naoshi
MIRAI-Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Awano Yuji
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Awano Yuji
MIRAI-Selete, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Suzuki Mariko
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Suzuki Mariko
MIRAI-Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Yamazaki Yuichi
MIRAI-Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Yamazaki Yuichi
MIRAI--Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sato Shintaro
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sato Shintaro
MIRAI-Selete, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Sakai Tadashi
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sakai Tadashi
MIRAI-Selete, 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Katagiri Masayuki
MIRAI–Selete (Semiconductor Leading Edge Technologies, Inc.), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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