Nonalloyed Ohmic Contacts for HEMTs Using n^+-InGaAs Layers Grown by MOVPE (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
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概要
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We fabricated and investigated HEMTs with nonalloyed ohmic contacts using highly conductive n^+-In_<0.5>Ga_<0.5> As contact layers. We optimized the growth condition of n^+-In_<0.5> Ga_<0.5>As contact layers by MOVPE. Using WSi/W nonalloyed ohmic electrodes, we fabricated InGaP/InGaAs/GaAs pseudomorphic HEMTs with thermal stability of 500℃ for 30 minutes. In order to examine the scalability of HEMT devices, we tried to reduce the total size of HEMT devices to 3.2 μm using nonalloyed ohmic electrodes, which is the smallest value as far as we know. We could reduce the nonalloyed ohmic contact length L_<oh> to 0.4 μm without degrading the device characteristics. Reducing the n^+-In_<0.5>Ga_<0.5>As contact length L_<IGA> to 1 μm, however, decreased the transconductance g_m by about 20. We found that the scaling of the conventional nonalloyed HEMT structure is limited by L_<IGA>.
- 社団法人電子情報通信学会の論文
- 1994-09-25
著者
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SUEHIRO Haruyoshi
Fujitsu Laboratories Ltd.
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HARA Naoki
Fujitsu Laboratories Ltd.
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Kuroda Shigeru
Fujitsu Laboratories Ltd.
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Nihei M
Fujitsu Laboratories Ltd.
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Nihei Mizuhisa
Fujitsu Laboratories Ltd.
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Kuroda S
Fujitsu Laboratories Ltd.
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