60-GHz Virtual Common-Drain-Biased Oscillator Design Using an Empirical HEMT Model

概要

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We studied a 0.15-μm InGaP/InGaAs/GaAs pseudomorphic HEMT operating under a negative drain bias, using a parameter extraction technique based on an analytical parameter transformation. The bias-dependent data of small-signal equivalent circuit elements was obtained from S-parameters measured at up to 62.5 GHz at various bias settings. We then described the intrinsic part of the device using a new empirical large-signal model in which charge conservation and dispersion effects were taken into consideration. As far as we know, this is the first report to clarify the behavior of a HEMT operating under negative drain bias. We included our large-signal model in a commercially-available harmonic-balance simulator as a user-defined model, and designed a 60 GHz MMIC oscillator. The fabricated oscillator's characteristics agreed well with the design calculations.
社団法人電子情報通信学会の論文
1996-08-25