Mechanism of Ga Implantation-Induced Intermixing of GaAs-AlGaAs Material
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Ga implantation-induced intermixing is examined in terms of dose dependence and interdiffusion characteristics under conditions of dual implantation of As and Ga. At ion doses below 10^<15> cm^<-2>, intermixing is mainly enhanced by the diffusion of defects. In the ion-dose region below 3 × 10^<13> cm^<-2>, both implantation-induced damage and stoichiometric disturbances contribute to the formation of diffusing defects. The damage effect becomes dominant in the dose region around 10^<14> cm^<-2>. In the dose region above 10^<15> cm^<-2>, almost all interdiffusion is governed by atom coilision due to implantation.
- 社団法人応用物理学会の論文
- 1989-02-20
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