High-Mobility Two-Dimensional Electron Gas in an Undoped Heterostructure : Mobility Enhancement after Illumination
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概要
- 論文の詳細を見る
High-mobility two-dimensional electron gas (2DEG) is formed at an undoped GaAs/AlGaAs inverted heterointerface through the field-effect using a back-gate. Despite the structure being undoped, mobility enhancement is observed at 1.6 K after illumination. This suggests effective reduction of background impurity scattering by illumination. The maximum mobility reached after illumination, 5×10^6 cm^2/V・s, is the highest value ever reported for gated undoped heterostructures, including both normal- and inverted-type structures. This mobility is also the highest ever reported for inverted GaAs/AlGaAs heterostructures.
- 社団法人応用物理学会の論文
- 1998-07-01
著者
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SAKU Tadashi
NTT Basic Research Laboratories
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Muraki Koji
Ntt Basic Research Laboratories
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Hirayama Yoshiro
Ntt Basic Research Laboratories
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