Admittance Measurement for a Quantum Point Contact in a Multiterminal Quantum Hall Device
スポンサーリンク
概要
- 論文の詳細を見る
We present admittance measurements for a quantum point contact embedded in a multiterminal quantum Hall system, using a time-resolved technique. The real part of ac admittance agrees well with conventional dc conductance, while the imaginary part shows a crossover between inductive and capacitive admittance, as theoretically predicted in the low-frequency limit. Multiterminal measurements with different chiralities of edge channels ensure that possible extrinsic coupling is negligibly small. The characteristic capacitance in our device is estimated from dependence of the imaginary part on the frequency.
- 2011-04-25
著者
-
Muraki Koji
Ntt Basic Research Laboratories
-
Washio Kazuhisa
Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8551, Japan
-
Fujisawa Toshimasa
Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8551, Japan
-
Hashisaka Masayuki
Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8551, Japan
-
Kamata Hiroshi
Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8551, Japan
関連論文
- Bidirectional Current Drag Induced by Two-Electron Cotunneling in Coupled Double Quantum Dots
- Resistance Oscillations by Electron-Nuclear Spin Coupling in Microscopic Quantum Hall Devices
- 24aXA-5 Disorder and screening effects on the emergence of the v=5/2 fractional quantum Hall state
- Admittance Measurement for a Quantum Point Contact in a Multiterminal Quantum Hall Device
- Doubly Enhanced Skyrmions in v=2 Bilayer Quantum Hall States : Condensed Matter: Electronic Properties, etc.
- n^+-GaAs Back-Gated Double-Quantum-Well Structures with Full Density Control
- 28aTX-5 Magnetotransport Studies Between Filling Factor 2/3 and 3/5
- Independent Tuning of the Confinement and Density in a Quantum Point Contact using a Center Gate and a Back Gate
- Correlation of 1/f Noise between Semiconductor Point Contacts with a Common Lead (Special Issue : Solid State Devices and Materials (1))
- Gate Operation of InAs/AlGaSb Heterostructures with an Atomic-Layer-Deposited Insulating Layer
- 20pPSA-12 Effect of dynamic nuclear spin polarization on the transient current of a double quantum dot in the spin blockade region
- High-Mobility Two-Dimensional Electron Gas in an Undoped Heterostructure : Mobility Enhancement after Illumination
- 28pXQ-4 Sharp dip structures in excited-state current spectrum of a double quantum dot
- Transient Current in the Spin Blockade Region of a Double Quantum Dot
- 25pXD-7 1次元平面超格子における充填率5/3付近での微小磁気抵抗振動(量子ホール効果,領域4,半導体,メゾスコピック系・局在)