Characteristics of 1.3μm Laser Diode with Carbon-Doped InAlAs Layer
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2005-04-10
著者
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Shimoyama Kenji
Mitsubishi Chemical Co.
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Kurihara Kaori
Mitsubishi Chemical Co.
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ARAI Nobuhiro
Mitsubishi Chemical Co.
関連論文
- Characteristics of 1.3μm Laser Diode with Carbon-Doped InAlAs Layer
- Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates