SUZUKI Hiroshi | Higashifuji Technical Center, Toyota Motor Corporation
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概要
関連著者
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Bessho Takeshi
Higashifuji Technical Center Toyota Motor Corporation
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SUZUKI Hiroshi
Higashifuji Technical Center, Toyota Motor Corporation
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Danno Katsunori
Higashifuji Technical Center Toyota Motor Corporation
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ISHIKAWA Yukari
Japan Fine Ceramics Center
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DANNO Katsunori
Higashifuji Technical Center, Toyota Motor Corporation
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Saitoh Hiroaki
Higashifuji Technical Center Toyota Motor Corporation
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Kawai Yoichiro
Higashifuji Technical Center Toyota Motor Corporation
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SUGAWARA Yoshihiro
Japan Fine Ceramics Center (JFCC)
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SHIBATA Noriyoshi
Japan Fine Ceramics Center
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Kimoto Tsunenobu
Department Of Electronic Science And Engineering Kyoto University
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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BESSHO Takeshi
Toyota Motor Corporation
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Sato Koji
Japan Fine Ceramics Center
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SAITOH Hiroaki
Higashifuji Technical Center, Toyota Motor Corporation
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SEKI Akinori
Higashifuji Technical Center, Toyota Motor Corporation
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SHIRAI Takayuki
Higashifuji Technical Center, Toyota Motor Corporation
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KAWAI Yoichiro
Higashifuji Technical Center, Toyota Motor Corporation
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Shirai Takayuki
Higashifuji Technical Center Toyota Motor Corporation
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Yao Yong-zhao
Japan Fine Ceramics Center (jfcc)
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DANNO Katsunori
Toyota Motor Corporation
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SUZUKI Hiroshi
Toyota Motor Corporation
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Seki Akinori
Higashifuji Technical Center Toyota Motor Corporation
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Ishikawa Yukari
Japan Fine Ceramics Center, Nagoya 456-8587, Japan
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Sugawara Yoshihiro
Japan Fine Ceramics Center, Nagoya 456-8587, Japan
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Kawai Yoichiro
Higashifuji Technical Center, Toyota Motor Corporation, Susono, Shizuoka 410-1193, Japan
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Bessho Takeshi
Higashifuji Technical Center, Toyota Motor Corporation, Susono, Shizuoka 410-1193, Japan
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Danno Katsunori
Higashifuji Technical Center, Toyota Motor Corporation, Susono, Shizuoka 410-1193, Japan
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Saitoh Hiroaki
Higashifuji Technical Center, Toyota Motor Corporation, Susono, Shizuoka 410-1193, Japan
著作論文
- Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
- Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate
- Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature