Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature
スポンサーリンク
概要
- 論文の詳細を見る
- 2012-07-25
著者
-
ISHIKAWA Yukari
Japan Fine Ceramics Center
-
BESSHO Takeshi
Toyota Motor Corporation
-
Sato Koji
Japan Fine Ceramics Center
-
Bessho Takeshi
Higashifuji Technical Center Toyota Motor Corporation
-
DANNO Katsunori
Higashifuji Technical Center, Toyota Motor Corporation
-
SUZUKI Hiroshi
Higashifuji Technical Center, Toyota Motor Corporation
-
Danno Katsunori
Higashifuji Technical Center Toyota Motor Corporation
-
Yao Yong-zhao
Japan Fine Ceramics Center (jfcc)
-
SUGAWARA Yoshihiro
Japan Fine Ceramics Center (JFCC)
-
DANNO Katsunori
Toyota Motor Corporation
-
SUZUKI Hiroshi
Toyota Motor Corporation
関連論文
- Formation of Au and AuSi_x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO_2 Layer
- Development of Fine Porous Alumina Capillaries by a Dry-Wet Spinning Method(Synthesis and Processing,Guest Editors Dedicated to Prof. Gunter Petzow: Modern Trends in Advanced Ceramics)
- In Situ Transmission Electron Microscopy Observation of Au-Si Interface Reaction
- Creation of Highly Oriented Freestanding Carbon Nanotube Film by Sublimating Decomposition of Silicon Carbide Film
- Epitaxial Growth of 3C-SiC on Thin Silicon-on-Insulator Substrate by Chemical Vapor Deposition Using Alternating Gas Supply
- ICONE11-36431 Conceptual Design Study on Advanced Aqueous Reprocessing System for Fast Reactor Fuel Cycle
- Preparation of Oleic Acid-capped Copper Nanoparticles
- A Simple Way for Preparing Antioxidation Nano-copper Powders
- Room-Temperature Visible Photoluminescence from Single Crystal Si Quantum Well Structures
- Pretreatment of Nickel Plating on ASA Resin Using Ozonated Water as Replacement for Chromic Acid Etching
- Molten KOH etching with Na2O2 additive for dislocation revelation in 4H-SiC epilayers and substrates
- Creation of Highly-Ordered Si Nanocrystal Dots Suspended in SiO_2 by Molecular Beam Epitaxy with Low Energy Oxygen Implantation ( Quantum Dot Structures)
- Substrate-Polarity Dependence of AIN Single-Crystal Films Grown on 6H-SiC(0001) and (0001^^-) by Molecular Beam Epitaxy
- Growth of Aluminum Nitride Films on Silicon by Electron-Cyclotron-Resonance-Assisted Molecular Beam Epitaxy
- Preparation of Thin Silicon-on-Insulator Films by Low-Energy Oxygen Ion Implantation
- ICONE11-36538 PROPOSAL OF MATERIALS TRANSFER CAPABILITY EVALUATION MODEL AND ITS APPLICATION TO PYROCHEMICAL REPROCESSING PLANT
- White Photoluminescence from Carbon-Incorporated Silica Fabricated from Rice Husk (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature
- Preparation of Silicon-on-Insulator Substrate on Large Free-Standing Carbon Nanotube Film Formation by Surface Decomposition of SiC Film
- Effects of Surface Oxides of SiC on Carbon Nanotube Formation by Surface Decomposition
- Effects of Synthesis Process on Luminescence Properties and Structure of Mesoporous Carbon-Silica Nanocomposite
- Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
- Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate
- Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature
- Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer
- Substrate-Polarity Dependence of AlN Single-Crystal Films Grown on 6H–SiC(0001) and ($000\bar{1}$) by Molecular Beam Epitaxy
- Surface Modification of Insulation Resin for Build-up Process Using TiO2 as a Photocatalyst and Its Application to the Metallization
- Near-Infrared Light Emissions from Er-doped ZnO Thin Films Induced by an Electrical Field
- Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining