Preparation of Thin Silicon-on-Insulator Films by Low-Energy Oxygen Ion Implantation
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Silicon-on-insulator (SOI) structures have been formed by oxygen implantation with the ion energy of 15-30 keV in silicon wafers. The ion implantation conditions which produce the SOI structure have been investigated both by calculation and experiments. As-implanted layers were analyzed by Auger electron spectroscopy and cross-sectional transmission electron microscopy. The thicknesses of the SOI layer and the buried amorphous SiO_x layer are 48 and 61 nm, respectively, under the conditions at the O^+ ion energy of 25 keV, with the dose of 2×10^<17> ion/cm^2, and at about 450℃. The SOI layers are homogeneous and have sharp Si/SiO_x interfaces.
- 社団法人応用物理学会の論文
- 1991-10-15
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