Surface Etching of 6H-SiC(0001) by Annealing in Vacuum for Obtaining an Atomically Flat Surface
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概要
- 論文の詳細を見る
In order to obtain a fiat SiC surface, both the Si(0001) and the C(0001) faces of 6H-SiC were annealed in vacuum at temperatures above 1700℃ for 2h. After removing graphite films grown on the Si face, scratches due to polishing vanished, and a smooth surface with atomically flat crystal terraces of width ranging from 200 to 400nm and step height ranging from 0.8 to 2.2nm appeared. On the other hand, a rough surface with many holes and particles was observed on the C face when using the same procedures as for the Si face. The etching technique for the Si face is useful for preparing SiC substrates for epitaxial growth, although there were some small pits on the surface due to the native defects in the crystal.
- 社団法人応用物理学会の論文
- 2002-11-01
著者
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Nagano Takayuki
Japan Fine Ceramics Center
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SHIBATA Noriyoshi
Japan Fine Ceramics Center
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HARADA Masashi
Japan Fine Ceramics Center
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