Fabrication of Aluminum Nitride Thin Film and Its Oxidation Behavior
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概要
- 論文の詳細を見る
The oxidation behavior of an aluminum nitride (AlN) thin film, fabricated by reactive DC magnetron sputtering using aluminum metal as a target material was examined. The obtained AlN film was transparent with a flat surface. An annealing test was carried out for the AlN film at 1000℃ in air. The oxidation product was identified as γ-Al_2O_3 by Rutherford backscattering composition and X-ray diffraction analyses. Transmission electron microscopy showed a polycrystalline Al_2O_3 film with a grain size of several tens of nm. It was confirmed that the interface of AlN film and silicon substrate was protected from oxidation although the Al_2O_3 layer thickness increased during the oxidation.
- 社団法人日本材料学会の論文
- 2006-08-15
著者
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Ito Hiroki
Japan Fine Ceramics Center
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SHIBATA Noriyoshi
Japan Fine Ceramics Center
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YAMASHITA Masashi
Japan Fine Ceramics Center (JFCC)
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SASAKI Yukichi
Japan Fine Ceramics Center (JFCC)
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Sasaki Yukichi
Japan Fine Ceramics Center
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Ohsato Hitoshi
Dept. Of Materials Sci. And Eng. Nagoya Inst. Of Tech.
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Yamashita Masashi
Japan Fine Ceramics Center:dept. Of Materials Sci. And Eng. Nagoya Inst. Of Tech.
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