Molten KOH etching with Na2O2 additive for dislocation revelation in 4H-SiC epilayers and substrates

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Surface Etching of 6H-SiC(0001) by Annealing in Vacuum for Obtaining an Atomically Flat Surface
Molten KOH etching with Na2O2 additive for dislocation revelation in 4H-SiC epilayers and substrates
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Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature
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Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate
Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature
Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer
Substrate-Polarity Dependence of AlN Single-Crystal Films Grown on 6H–SiC(0001) and ($000\bar{1}$) by Molecular Beam Epitaxy
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Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining

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