ISHIKAWA Yukari | Japan Fine Ceramics Center

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Formation of Au and AuSi_x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO_2 Layer
In Situ Transmission Electron Microscopy Observation of Au-Si Interface Reaction
Creation of Highly Oriented Freestanding Carbon Nanotube Film by Sublimating Decomposition of Silicon Carbide Film
Epitaxial Growth of 3C-SiC on Thin Silicon-on-Insulator Substrate by Chemical Vapor Deposition Using Alternating Gas Supply
Room-Temperature Visible Photoluminescence from Single Crystal Si Quantum Well Structures
Molten KOH etching with Na2O2 additive for dislocation revelation in 4H-SiC epilayers and substrates
Creation of Highly-Ordered Si Nanocrystal Dots Suspended in SiO_2 by Molecular Beam Epitaxy with Low Energy Oxygen Implantation ( Quantum Dot Structures)
Substrate-Polarity Dependence of AIN Single-Crystal Films Grown on 6H-SiC(0001) and (0001^^-) by Molecular Beam Epitaxy
Growth of Aluminum Nitride Films on Silicon by Electron-Cyclotron-Resonance-Assisted Molecular Beam Epitaxy
Preparation of Thin Silicon-on-Insulator Films by Low-Energy Oxygen Ion Implantation
White Photoluminescence from Carbon-Incorporated Silica Fabricated from Rice Husk (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature
Preparation of Silicon-on-Insulator Substrate on Large Free-Standing Carbon Nanotube Film Formation by Surface Decomposition of SiC Film
Effects of Surface Oxides of SiC on Carbon Nanotube Formation by Surface Decomposition
Effects of Synthesis Process on Luminescence Properties and Structure of Mesoporous Carbon-Silica Nanocomposite
Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate
Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature
Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer
Substrate-Polarity Dependence of AlN Single-Crystal Films Grown on 6H–SiC(0001) and ($000\bar{1}$) by Molecular Beam Epitaxy
Near-Infrared Light Emissions from Er-doped ZnO Thin Films Induced by an Electrical Field
Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining

もっと見る

スポンサーリンク