Shibata N | Ntt Optoelectronics Laboratories Nippon Telegraph And Telephone Corporation
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概要
関連著者
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Shibata N
Japan Fine Ceramics Center Nagoya Jpn
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Shibata N
Ntt Optoelectronics Laboratories Nippon Telegraph And Telephone Corporation
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Shibata N
Japan Fine Ceramics Center Nggoya Jpn
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大木 章
鹿児島大学大学院理工学研究科化学生命・化学工学専攻
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小田 俊理
東工大工
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Ohki Akira
Department Of Applied Chemistry And Chemical Engineering Facutly Of Engineering Kagoshima University
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Oda S
Tokyo Inst. Technology Tokyo Jpn
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Oda S
Tokyo Inst. Technol. Tokyo Jpn
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Oda Shunri
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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SHIMIZU Isamu
The Graduate School at Nagatsuta
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SHIBATA Naoki
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Shimizu I
Osaka Univ. Osaka Jpn
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Oda Shunri
The Graduate School At Nagatsuta And Imaging Science And Engineering Laboratory Tokyo Institute Of T
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Shimizu I
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Zembutsu S
Ntt Optoelectronics Lab. Ibaraki
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小田 俊理
東京工業大学量子ナノエレクトロニクス研究センター
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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ISHIKAWA Yukari
Japan Fine Ceramics Center
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SHIBATA Noriyoshi
Japan Fine Ceramics Center
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Ohki Akira
Ntt Optoelectronics Laboratories Nippon Telegraph And Telephone Corporation
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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ZEMBUTSU Sakae
NTT Optoelectronics Laboratories, Nippon Telegraph and Telphone Corporation
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Zembutsu Sakae
Ntt Optoelectronics Laboratories
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Hanna J
Tokyo Inst. Technol. Yokohama Jpn
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Ohki Akira
Ntt Opto Electric Labs
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HANNA Jun-ichi
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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TANABE Akihito
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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SHIBATA Noriyoshi
NTT Optoelectronics Laboratories, Nippon Telegraph and Telphone Corporation
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Tanabe Akihito
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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石川 靖彦
静岡大学電子工学研究所
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Fukuda K
Electrotechnical Lab. Ibaraki Jpn
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Ishikawa Y
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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SAITO Tomohiro
Japan Fine Ceramics Center
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FUKUDA Kaichi
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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OHTOSHI Hirokazu
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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MIYAUCHI Akihiro
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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Shimizu T
Univ. Occupational And Environmental Health Jpn
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KATSUI Akinori
NTT Opto-Ekectronics laboratories
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Shimizu Tadao
Department Of Physics University Of Tokyo
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Shimizu T
Department Of Electrical And Electronic Engineering Kanazawa University
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Saito T
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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MIYAUCHI Akihiro
Hitachi Research Laboratory, Hitachi Ltd.
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Shimizu T
Faculty Of Engineering Chiba University
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SHIMIZU Toshiki
Japan Fine Ceramics Center
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Fukuda Kuniya
Department Of Engineering Physics Faculty Of Engineering Kyoto University
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Katsui A
Ntt Opto‐electronics Lab. Ibaraki‐ken
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Katsui Akinori
Ntt Ibaraki Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation
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Shimizu Tatsuo
Faculty Of Technology
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Shimizu T
Chiba Univ. Chiba Jpn
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Shibata Noboru
Faculty Of Engineering Osaka Electro-communication University
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Miyauchi Akihiro
Hitachi Research Laboratory Hitachi Ltd.
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Saito T
School Of Engineering Nagoya University
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Shimizu Tadao
Department Of Industrial Chemistry Chiba Institute Of Technology
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Shimizu Tadao
Department Of Physics Faculty Of Science The University Of Tokyo
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Ohtoshi Hirokazu
The Graduate School At Nagatsuta Tokyo Institute Of Technology
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Nagano Takayuki
Japan Fine Ceramics Center
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ZAIMA Shigeaki
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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SAKASHITA Mitsuo
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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Sakashita Mitsuo
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Sakashita Mitsuo
Department Of Crystalline Materials Science School Of Engineering Nagoya University
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Sakashita Mitsuo
Japan Fine Ceramics Center
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Sakashita M
Nagoya Univ. Nagoya Jpn
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Ikoma Hideaki
Faculty Of Science And Technology Science University Of Tokyo
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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KUSUNOKI Michiko
Japan Fine Ceramics Center, FCT Central Research Department
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SHIRAI Hajime
The Graduate School at Nagatsuta, Tokyo Institute of Technology
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SHIBATA Noboru
Faculty of Science and Technology Science University of Tokyo
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SHIBATA Noriyuki
NTT Optoelectronics Laboratories, Nippon Telegraph and Telephone Corporation
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SHIBATA Noriyoshi
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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OHKI Akira
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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ZEMBUTSU Sakae
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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Shirai Hajime
The Graduate School At Nagatsuta Tokyo Institute Of Technology:(present Address) Saitama University
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Zembutsu Sakae
Ntt Electrical Communications Laboratories
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Shibata Noboru
Faculty Of Liberal Arts Nagasaki University
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Shibata Noriyoshi
Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation
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Iwanaga Hiroshi
Faculty Of Liberal Arts And Education. Ngasaki University
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YOSHIE Toshimasa
Faculty of Liberal Arts, Nagasaki University
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YAMAGUCHI Taeko
Faculty of Liberal Arts, Nagasaki University
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Kusunoki Michiko
Japan Fine Ceramics Center
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Yamaguchi Taeko
Faculty Of Liberal Arts Nagasaki University
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Yoshie Toshimasa
Faculty Of Liberal Arts Nagasaki University
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Ishihara Shun'ichi
The Graduate School At Nagatsuta Tokyo Institute Of Technology
著作論文
- Formation of Au and AuSi_x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO_2 Layer
- Hole Transport in Silicon Thin Films with Variable Hydrogen Content
- Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor Deposition
- Hole Transport in a-Si:H(F) Prepared by Hydrogen-Radical-Assisted Chemical Vapor Deposition
- Preparation of Highly Photoconductive a-SiGe_x from Fluorides by Controlling Reactions with Atomic Hydrogen
- The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys
- In Situ Transmission Electron Microscopy Observation of Au-Si Interface Reaction
- Creation of Highly Oriented Freestanding Carbon Nanotube Film by Sublimating Decomposition of Silicon Carbide Film
- Epitaxial Growth of 3C-SiC on Thin Silicon-on-Insulator Substrate by Chemical Vapor Deposition Using Alternating Gas Supply
- X-Ray Photoelectron Spectroscopic Study of Oxidation of InP II: Thermal Oxides Grown at High Temperatures
- Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- Thermoelastic Strain in ZnSe Films Grown on GaAs by Metalorganic Vapor Phase Epitaxy : Condensed Matter
- Photoluminescence Due to Lattice-Mismatch Defects in High-Purity ZnSe Layers Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- High-Quality ZnSe Film Growth by 0.1-atm MOVPE under the Diethylzinc Diffusion-Limited Condition
- Morphology and Polarity of Twinned Crystals in II-VI Compounds