Zembutsu S | Ntt Optoelectronics Lab. Ibaraki
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概要
関連著者
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大木 章
鹿児島大学大学院理工学研究科化学生命・化学工学専攻
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Shibata N
Japan Fine Ceramics Center Nagoya Jpn
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Ohki Akira
Department Of Applied Chemistry And Chemical Engineering Facutly Of Engineering Kagoshima University
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Shibata N
Ntt Optoelectronics Laboratories Nippon Telegraph And Telephone Corporation
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Shibata N
Japan Fine Ceramics Center Nggoya Jpn
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Zembutsu S
Ntt Optoelectronics Lab. Ibaraki
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Ohki Akira
Ntt Optoelectronics Laboratories Nippon Telegraph And Telephone Corporation
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ZEMBUTSU Sakae
NTT Optoelectronics Laboratories, Nippon Telegraph and Telphone Corporation
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Zembutsu Sakae
Ntt Optoelectronics Laboratories
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Ohki Akira
Ntt Opto Electric Labs
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SHIBATA Noriyoshi
NTT Optoelectronics Laboratories, Nippon Telegraph and Telphone Corporation
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KATSUI Akinori
NTT Opto-Ekectronics laboratories
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Katsui A
Ntt Opto‐electronics Lab. Ibaraki‐ken
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Katsui Akinori
Ntt Ibaraki Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation
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SHIBATA Noriyuki
NTT Optoelectronics Laboratories, Nippon Telegraph and Telephone Corporation
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SHIBATA Noriyoshi
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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OHKI Akira
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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ZEMBUTSU Sakae
NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation
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Zembutsu Sakae
Ntt Electrical Communications Laboratories
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Shibata Noriyoshi
Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation
著作論文
- Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- Thermoelastic Strain in ZnSe Films Grown on GaAs by Metalorganic Vapor Phase Epitaxy : Condensed Matter
- Photoluminescence Due to Lattice-Mismatch Defects in High-Purity ZnSe Layers Grown by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase Epitaxy : Semiconductors and Semiconductor Devices
- High-Quality ZnSe Film Growth by 0.1-atm MOVPE under the Diethylzinc Diffusion-Limited Condition