Substrate-Polarity Dependence of AlN Single-Crystal Films Grown on 6H–SiC(0001) and ($000\bar{1}$) by Molecular Beam Epitaxy

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概要

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• The polarity of AlN films grown epitaxially on the Si(0001) and C($000\bar{1}$) faces of 6H–SiC substrates utilizing molecular beam epitaxy (MBE) were investigated. A number of small pits with sizes less than 10–20 nm were observed on the AlN surface. The pits in AlN film on the Si face combined with neighboring ones to form linear dents, while those on the C face were isolated from each other. X-ray photoelectron spectroscopy (XPS) measurement showed clear differences in the binding energy of Al2p and N1s core levels and in the intensity ratios of $I_{\text{N1s}}/I_{\text{Al2p}}$ between the AlN films on the Si and C faces. The XPS spectra also showed that more oxygen was contained in the AlN film grown on the Si face than that on the C face. The results reveal that the {0001} surfaces of AlN films grown on the Si and C faces are terminated with aluminum and nitrogen, respectively.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-05-15

著者

• ISHIKAWA Yukari

  Japan Fine Ceramics Center

• SAITO Tomohiro

  Japan Fine Ceramics Center

• SHIBATA Noriyoshi

  Japan Fine Ceramics Center

• HARADA Masashi

  Japan Fine Ceramics Center

• Harada Masashi

  Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta-ku, Nagoya 456-8587, Japan

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