Surface Defects and Local Strain in Polished Silicon by Transmission Electron Microscopy

概要

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Surface defects and local strain in polished silicon were characterized by cross-sectional transmission electron microscopy (XTEM) and convergent beam electron diffraction (CBED). Dislocations are introduced from the surface by polishing with diamond slurry, and their main slip system was found to be 1/2<101>{111}. The depth of the dislocation-introduced zone deepens with increasing diamond particle size, however, the density of dislocations is fairly high for materials polished with particles of small size. This is because the stress between particle and surface increases with increasing particle size, and the particle density increases with decreasing particle size. Local strain remains up to a depth of 1-1.5μm beneath the surface for samples polished with 0.5 to 6μm diamond slurry. This residual stress is distributed approximately 1μm below the dislocation-introduced zone.
社団法人応用物理学会の論文
1995-06-15