Near-Infrared Light Emissions from Er-doped ZnO Thin Films Induced by an Electrical Field
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概要
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We obtained near-infrared (NIR) emissions by applying an electric field to a ZnO thin film containing Er ions. The sample construction was indium tin oxide (ITO) film/Er-doped ZnO film/ITO film on a SiO2 glass substrate. By applying a suitable alternative voltage to the sample, a broad luminescence in the NIR wavelength range was observed. The intensity of the luminescence increased with applied voltage. The luminescence induced by the electric field had a wavelength of 1.5 μm, which suggests that the light emission is related to the intrashell transition of Er3+.
- 社団法人 日本セラミックス協会の論文
著者
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ISHIKAWA Yukari
Japan Fine Ceramics Center
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SHIBATA Noriyoshi
Japan Fine Ceramics Center
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TANAKA Shigeru
Japan Fine Ceramics Center
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