Ono Hidenori | Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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概要
- Ono Hidenoriの詳細を見る
- 同名の論文著者
- Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technologyの論文著者
関連著者
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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Ono Hidenori
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Kato Masashi
Department Of Applied Biological Chemistry Faculty Of Agriculture Meijo University
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ICHIMURA Masaya
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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Ogawa Kazuya
Department of Cardiology, Surugadai Nihon University Hospital
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Ogawa Kazuya
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Kato Masashi
Department Of Bioenvironmental Medicine Graduate School Of Medicine Chiba University
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Ichimura Masaya
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Ono Hidenori
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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Ogawa Kazuya
Department Of Cardiology Surugadai Nihon University Hospital
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Kato Masashi
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Kato Masashi
Department Of Applied Biological Chemistry Fuculty Of Agriculture Meijo University
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Ono Hidenori
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Feng Gan
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
著作論文
- Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)