Schottky barrier height determination by capacitance-voltage measurement on n-GaN with exponential doping profile
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概要
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A capacitance–voltage ($C$–$V$) method was developed to extrapolate the Schottky barrier height on n-GaN with exponential carrier concentration profile. The carrier concentration profile of the unintentionally doped GaN was determined by $C$–$V$ measurement to be exponential. On the basis of this profile, one-dimensional Poisson's equation was calculated to obtain the relation between bias voltage and depletion width. Schottky barrier height was obtained by fitting the curves of $1/C^{2}$ and $V$ with the experimental one, using the Schottky barrier height itself as a fitting parameter.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-07-15
著者
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Kubota N
Department Of Applied Chemistry Faculty Of Engineering Oita University
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Ohno Y
Department Of Electrical And Electronic Engineering Faculty Of Engineering Utsunomiya University
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Kikuta Daigo
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Kikuta D
Department of Electrical and Electronic Engineering, The University of Tokushima,
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Kubota Naotaka
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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Ao JP
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
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