Suzuki Toshi-kazu | Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)

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概要

• Suzuki Toshi-kazuの詳細を見る
• 同名の論文著者
• Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)の論文著者

関連著者

• Suzuki Toshi-kazu

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)

• Akabori Masashi

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)

• SHIH Hong-An

  Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)

• Kudo Masahiro

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)

• Suzuki Toshi-kazu

  Japan Advanced Institute Of Science And Technology (jaist)

• Shih Hong‐an

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)

• AKABORI Masashi

  Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)

• KUDO Masahiro

  Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)

• KAWAI Hiroji

  Powdec K.K

• Jeong Yonkil

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)

• TANIGUCHI Satoshi

  Sony Corporation

• ONO Hideki

  Advanced Devices R&D Department, Micro Systems Network Company, Sony Corporation

• TANIGUCHI Satoshi

  Advanced Devices R&D Department, Micro Systems Network Company, Sony Corporation

• SHINDO Masanori

  Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)

• Shindo Masanori

  Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)

• Sumida Yasunobu

  POWDEC K.K., 1-23-15 Wakagi-cho, Oyama, Tochigi 323-0028, Japan

• Ono Hideki

  Advanced Devices R&D Department, Micro Systems Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014, Japan

• Taniguchi Satoshi

  Advanced Devices R&D Department, Micro Systems Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa 243-0014, Japan

• Tanaka Nariaki

  Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan

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著作論文

• Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
• Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
• Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates
• Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
• Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
• Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation
• Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures (Special Issue : Solid State Devices and Materials (1))
• Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
• Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
• Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET

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