Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Suzuki Toshi-kazu
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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Akabori Masashi
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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Shih Hong‐an
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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SHIH Hong-An
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST)
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Kudo Masahiro
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
関連論文
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- Narrow-gap III-V semiconductor technology : lattice-mismatched growth and epitaxial lift-off for heterogeneous integration(Session1: Compound Semiconductor Devices)
- Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
- Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface Passivation
- Fabrication and Analysis of AlN/GaAs(001) and AlN/Ge/GaAs(001) Metal-Insulator-Semiconductor Structures (Special Issue : Solid State Devices and Materials (1))
- Application of Sputtering-Deposited AlN Films to Gate Dielectric for AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistor (Special Issue : Solid State Devices and Materials (1))
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- Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
- Temperature dependence of frequency dispersion in C-V characteristics of AlN/AlGaN/GaN MIS-HFET
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