Crystal Orientation of Epitaxial $\alpha$-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering
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概要
- 論文の詳細を見る
We have prepared Ta thin films on Si(100) and Si(111) substrates by increasing the substrate temperature from room temperature (RT) to 500 °C, using an ultrahigh-vacuum dc magnetron sputtering system. The obtained film crystallinities were evaluated by X-ray diffraction and X-ray pole figure analyses. It was found that the crystal phase of the prepared Ta films transforms gradually from the $\beta$-Ta phase to the $\alpha$-Ta phase with increasing substrate temperature, and the epitaxial growth of the $\alpha$-Ta(110) plane was realized at substrate temperatures of 400 °C on Si(100) and 200 °C on Si(111). In addition, it was also clarified that the $\alpha$-Ta(110) films are grown epitaxially in a twin state on Si(100), while they are grown epitaxially in a triplet state on Si(111).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-07-25
著者
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Yanagisawa Hideto
Department Of Electrical And Electronic Engineering Kitami Institute Of Technology
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Kudo Masahiro
Center For Nano Materials And Technology Japan Advanced Institute Of Science And Technology (jaist)
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Yanagisawa Hideto
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Shinkai Satoko
Center for Microelectronic System, Kyusyu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
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Shinkai Satoko
Center for Microelectronic System, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
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Kudo Masahiro
Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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