Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in $\text{Ar}+\text{O$_{2}$}$ and $\text{Ar}+\text{N$_{2}$}$ Mixed Gases

概要

論文の詳細を見る
Reactive sputtering is a very useful and widely used technique for preparing compound thin films, however, the target surface state is not fully understood. In this study, a Si wafer was used as a model sputtering target, and the thickness of the oxide and nitride layers formed on the target surface after sputtering in $\text{Ar}+\text{O$_{2}$}$ and $\text{Ar}+\text{N$_{2}$}$ mixed gases, respectively, was measured by ellipsometry. The maximum thicknesses of oxide and nitride layers were found to be approximately 7 nm in pure O2 gas and 4 nm in pure N2 gas, respectively. The oxidation rate of Si in oxygen plasma was thought to be higher than the nitridation rate of Si in nitrogen plasma.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-10-15