Dielectric Properties of Zr–Al Anodized Thin Film Capacitors Prepared Using Al-Doped Zr Alloy Films
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概要
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We have examined the dielectric properties of Zr–Al anodized thin film capacitors prepared using Al-doped Zr alloy films to improve the thermal stability and capacitance density of pure-Zr anodized thin film capacitors. The Al content of the Zr–Al anodized film was varied from 0 to 24 at. %. It was revealed that the capacitance densities of the Zr–Al anodized capacitors increase with increasing Al content to 17 at. %, because the tetragonal ZrO2 phase grows and the monoclinic ZrO2 phase disappears, although pure-Zr anodized films consist of a mixture of monoclinic and tetragonal ZrO2 phases. In addition, it was confirmed that the thermal stability of the Zr–Al(17 at. %) anodized film is superior to that of the pure-Zr anodized film. We infer that this is due to the formation of the tetragonal ZrO2 phase by Al doping.
- 2010-10-25
著者
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Yanagisawa Hideto
Department Of Electrical And Electronic Engineering Kitami Institute Of Technology
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Yamane Misao
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Shinkai Satoko
Center for Microelectronic System, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
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Kimizaki Hidefumi
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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