Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by Low-Temperature Process and Their Surface Morphologies
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概要
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We have investigated the epitaxial growth of (0001)Ru thin films on (111)ZrN/(111)Si epitaxial systems at room temperature using an ultrahigh-vacuum dc magnetron sputtering system. The film quality obtained and the epitaxial relationship were evaluated by X-ray diffraction, X-ray pole figure, grazing-incidence-angle X-ray reflectivity, and atomic force microscopy analyses. It was found that (0001)Ru films with a thickness of 100 nm were grown epitaxially on a (111)ZrN(40 nm)/(111)Si system even at room temperature with the directional relationship of $\text{Ru}(0001)[11\bar{2}0]\parallel\text{ZrN}(111)[110]\parallel \text{Si}(111)[110]$. In addition, it was also clarified that an epitaxial (0001)Ru film with a thickness of 3 nm on a (111)ZrN (6 nm)/(111)Si system can be regarded as a dense film with the same density as the bulk, and exhibits a fairly flat surface morphology with an average surface roughness of approximately 0.2–0.3 nm.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-03-25
著者
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Yanagisawa Hideto
Department Of Electrical And Electronic Engineering Kitami Institute Of Technology
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Sakurai Junpei
Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Shinkai Satoko
Center for Microelectronic System, Kyusyu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
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Shinkai Satoko
Center for Microelectronic System, Kyushu Institute of Technology, 680-4 Kawazu, Iizuka, Fukuoka 820-8502, Japan
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