Effect of Heat Treatment on Ion Conductivity of Hydrated ZrO2 Thin Films Prepared by Reactive Sputtering Using H2O Gas
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概要
- 論文の詳細を見る
Hydrated ZrO2 thin films were prepared by reactive sputtering using H2O gas, and these films were heat treated in air at temperatures from 100 to 350 °C. Absorbance peaks due to hydrogen-bonded OH groups for these samples were observed by Fourier transform infrared spectroscopy. The peak intensities were nearly the same before and after heat treatment below 200 °C, but began to decrease at 250 °C, and the absorption peak disappeared at 350 °C. Ion conductivity of the films was evaluated by AC impedance measurements and was found to be about $3 \times 10^{-6}$ S/m before and after heat treatment at 200 °C; it also decreased after heat treatment above 250 °C. From these results, we considered that protons of OH and/or H2O in the films are the dominant ionic species that contribute to the ion conductivity of the films.
- 2011-04-25
著者
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Abe Yoshio
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Kawamura Midori
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Li Ning
Department Of Analytical Chemistry Shenyang Pharmaceutical University
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Itoh Hidenobu
Department Of Materials Science And Engineering Kitami Institute Of Technology
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Suzuki Tsutomu
Department Of Applied And Environmental Chemistry Kitami Institute Of Technology
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Li Ning
Department of Materials Science and Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Kawamura Midori
Department of Materials Science and Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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Sasaki Katsutaka
Department of Materials Science and Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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