Oxidation Characteristics of Al–Ta Thin Alloy Films as a Passivation Layer on Cu
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概要
- 論文の詳細を見る
The oxidation characteristics of Al and Al–Ta alloy films (500 Å) deposited as a passivation layer on Cu have been examined by depth profiling using Auger electron spectroscopy and X-ray photoelectron spectroscopy. Although alloying between Al and Cu takes place, the Al films prevent the oxidation of Cu up to the oxidation temperature of ∼300° C for 1 h in air, at which the surface-oxidized Al2O3 layer maintains the self-passivating ability. At more elevated oxidation temperatures, the further oxidation of Al and the formation of CuO in the Al–Cu alloy layer just beneath the oxide layer are confirmed to occur. On the contrary, the Al–Ta alloy films completely protect the Cu layer from oxidation even after oxidation at 500° C for 1 h in air. This is achieved due to the formation of the Ta buffer layer which separates the Cu layer from the surface-oxidized one, which is formed by the preferential oxidation of Al and the rejection of Cu from the Al2O3 during the oxidation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-15
著者
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama M
Kitami Inst. Technol. Kitami Jpn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Taguchi Masahiro
Department Of Molecular Biotechnology Graduate School Of Advanced Sciences Of Matter Hiroshima Unive
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Ichikawa T
Fdk Corp. Shizuoka Jpn
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Ichikawa Takaaki
Department Of Applied Physics Okayama University Of Science
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Taguchi Masahiro
Department Of Electrical And Electronic Engineering Faculty Of Engineering
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