Characterization of silicon nitride thin films deposited by reactive sputtering and plasma-enhanced CVD at low temperatures
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概要
- 論文の詳細を見る
- Institute of Physicsの論文
- 2014-04-16
著者
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan.
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- Formation of Preferentially Oriented Cu [111] Layer on Nb [110] Barrier on SiO_2
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- Structural Analyses of Cu[111] Layer on Nb[110] Barrier Formed on SiO_2 (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
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- Thermal Stability of W_2N Compound Barrier in W/W_2N/poly-Si Gate Electrode Configuration(Electronic Materials)
- Effectiveness of Al_W Layer on Suppression of Spontaneous Reaction in Al/Al_W/W_2N/Si Contact Systems
- Solid-Phase Reactions in Polymorphic Epitaxial Contact Systems of Al/YSi_/Si
- Preparation of WN_x Films and Their Diffusion Barrier Properties in Cu/Si Contact Systems
- Thermal Stability of W_2N Compound Barrier in W/W_2N/poly-Si Gate Electrode Configuration
- Transmissin Electron Microscopy Observation of Polymorphic Epitaxial Growth of YSi_ Layer in Al(001)/YSi_/Si(001) Systems
- Thermal Stability of W_2N Film as a Diffusion Barrier between Al and Si
- Oxidation Behavior of Ta Thin Films as a Passivation Layer Deposited on Cu
- Oxidation Characteristics of Al–Ta Thin Alloy Films as a Passivation Layer on Cu
- Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP
- Effects of Al3Ta/TaN Bilayered Diffusion Barriers in the Al/Si Contact Systems
- Auger Electron Spectroscopy Study on the Stability and the Interfacial Reaction of Ta, Ta-N arnd TaN Films as a Diffusion Barrier between Cu_9Al_4 Film and Si
- Characterizations and Barrier Properties of WN_x Film in the Al_W/WN_x/Si Contact System
- Barrier Properties of Thin ZrNx Films Prepared by Radical-Assisted Surface Reaction
- Atomic Layer Deposition of Thin VNx Film from Tetrakis(diethylamido)vanadium Precursor
- Oxidation Characteristics of Thin Al--Mo Alloy Films with Various Compositions as Metal Capping Layer on Cu
- Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC
- Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2
- Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
- Evolution of Microstructures in Nanocrystalline VN Barrier Leading to Failure in Cu/VN/SiO2/Si Systems
- Characterization of silicon nitride thin films deposited by reactive sputtering and plasma-enhanced CVD at low temperatures
- Characterization of TiHfN ternary alloy films as a barrier between Cu plug and Si
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