Effectiveness of Al_<12>W Layer on Suppression of Spontaneous Reaction in Al/Al_<12>W/W_2N/Si Contact Systems
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概要
- 論文の詳細を見る
The effectiveness of the interposed Al_<12>W layer in realizing a thermally stable Al/Al_<12>W/W_2N/Si contact was examined by varying its thickness. It was revealed that an interposed Al_<12>W layer whose thickness is greater than the diffusion length of the species that participates in the spontaneous reaction of the Al_<12>W formation upon annealing was required to realize a thermally stable interface in the contact. The effectiveness of the interposed Al_<12>W layer depended on the kinetics of the spontaneous reaction between Al and W in the contact.
- 社団法人応用物理学会の論文
- 1999-04-15
著者
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TAKEYAMA Mayumi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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NOYA Atsushi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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