Stoichiometry of Ta-N Film and Its Application for Diffusion Barrier in the Al_3Ta/Ta-N/Si Contact System
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概要
- 論文の詳細を見る
In order to obtain a stable contact structure applicable to Si-LSI thin film technology, we have produced the contact structure of Al_3Ta/Ta-N/Si by interposing the Ta-N film as a diffusion barrier between Al_3Ta film and Si substrate. The contact structure was heat-treated at various temperatures in vacuum, and the behavior of mass transport across the interfaces of both Al_3Ta/Ta-N and Ta-N/Si caused by the heating process was examined by Auger depth analysis. Also, on the basis of X-ray diffraction and XPS analysis, the barrier properties of the Ta-N film were examined with respect to the crystalline state and the chemical bonding state of the film. It is revealed that the thermal stability of this contact structure is closely related to the stoichiometry of the Ta-N film used as a diffusion barrier.
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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UMEZAWA Tomokazu
Faculty of Science and Technology,Keio University
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UMEZAWA Toshiji
Department of Electronic Engineering, Faculcy of Engineering, Kitami Institute of Technology
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Umezawa T
Teijin Ltd. Hiroshima Jpn
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