Preparation of WN_x Films and Their Diffusion Barrier Properties in Cu/Si Contact Systems
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概要
- 論文の詳細を見る
We prepared thin WN_x films with various compositions by reactive sputtering and examined their characterizations and barrier properties applied to Cu/WN_x/Si contact systems. The results indicate that the W_<65>N_<35> barrier, which is in the W_2N phase with preferred orientation in the (111) plane, shows excellent barrier properties for Cu metallization. The obtained Cu/W_2N/Si system is fairly stable without diffusion and/or reaction even after annealing at 800℃ for 1 h. This system stability is speculated to originate from the thermal stability of the W_2N film itself, which is chemically inert and scarcely changes in structure due to annealing.
- 社団法人応用物理学会の論文
- 1997-04-15
著者
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TAKEYAMA Mayumi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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NOYA Atsushi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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