Preparation of Mo-N Films and Characterization of Oxide Barriers in NbN/Mo-N Josephson Junctions
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概要
- 論文の詳細を見る
NbN/Mo-N junctions with bias-sputtered Mo-N counter electrodes and NbN electrodes with plasma-oxidized barriers exhibit SNS-type or SINS-type I-V characteristics, depending on the oxidation condition. It is found from AES and XPS studies that these junction properties are attributed to the composition and oxidation state of barriers
- 社団法人応用物理学会の論文
- 1988-12-20
著者
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Mizuno K
Matsushita Electric Industrial Co. Ltd.
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Noya Atsushi
Department Of Electronic Engineering Faculty Of Engineering Kitami Institute Of Technology
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Kuriki Shinya
Research Institute For Electronic Science Hokkaido University
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MIZUNO Koichi
Matsushita Electric Industrial Co., Ltd.
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Mizuno Koichi
Matsushita Electric Industrial Co. Ltd.
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Kuriki Shinya
Research Institule Of Applied Electricity Hokkaido Universitiy
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