Characterizations and Barrier Properties of WN_x Film in the Al_<12>W/WN_x/Si Contact System
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概要
- 論文の詳細を見る
Characterizations and barrier properties of WN_x film with varying nitrogen content have been examined in order to use the Al_<12>W/WN_x bilayer as a diffusion barrier in the contact system of Al/Si. The barrier properties of WN_x film are evaluated from the viewpoint of the mass transport across the interfaces in the system of Al_<12>W/WN_x/Si, by comparing the depth profiles obtained from Auger electron spectroscopy (AES) analysis before and after the heat treatments at various temperatures. It is revealed from the comparison of depth profiles that thermal stabilities of the system are excellent up to 600℃, when the stoichiometric W_2N compound film is used as the underlayer of the Al_<12>W/WN_x bilayer film.
- 社団法人応用物理学会の論文
- 1992-10-15
著者
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama M
Kitami Inst. Technol. Kitami Jpn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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