Thermal Stability of W_2N Compound Barrier in W/W_2N/poly-Si Gate Electrode Configuration(Electronic Materials)
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概要
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A high temperature performance of a W_2N compound barrier in the model electrode configuration of W/W_2N/poly-Si was examined. The stacked electrode was fairly stable upon annealing at 850℃ for 1h. In this electrode configuration, the decomposition and outdiffusion of nitrogen, which were observed in the electrode with a WN barrier incorporating nitrogen atoms at the interstitial sites in the bcc W lattice, were completely suppressed. We interpreted that the obtained excellent high temperature performance was attributed to the strong chemical interaction forming chemical bonds between nitrogen and W atoms in the W_2N compound barrier.
- 社団法人電子情報通信学会の論文
- 2003-11-01
著者
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TAKEYAMA Mayumi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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NOYA Atsushi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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