Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2

概要

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The texture of preferentially oriented Cu[111] deposited on a thin Nb layer is characterized in a thin-film stacked structure of Cu/Nb/SiO2/Si in an attempt to prepare a Cu[111] seed layer of interconnects on an extremely thin diffusion barrier. The Cu[111] layer is obtained on Nb films of [110] orientation at various thicknesses; however, the mosaic spread of Cu[111] texture depends on the thickness of Nb film underneath. The full width at half maximum of the $\omega$-rocking curve measurement is ${\sim}3$° for the Cu[111] layer on a 100-nm-thick Nb layer, which increases to ${\sim}4$ and ${\sim}5$° for that on 20- and 10-nm-thick Nb layers, respectively. Transmission electron microscopy reveals the 10-nm-thick Nb layer consisting of fine relatively mosaic-spread [110] grains, which is a result of the initial stage of the nucleation type growth of the Nb film in a columnar structure on SiO2. It is revealed that the Cu[111] texture of relatively good mosaicity in a columnar structure is obtained on an extremely thin Nb layer of 10 nm thickness.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-12-15