Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2
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概要
- 論文の詳細を見る
The results of analyses by X-ray diffraction, transmission electron microscopy, and grazing incidence X-ray reflectivity measurement indicate that a 5-nm-thick ZrN film interposed between Cu and SiO2 shows excellent barrier properties, tolerating annealing up to at least 500 °C for 30 min. The X-ray diffraction pattern reveals a decrease in the intensity of the Cu(111) reflection upon annealing at 800 °C, suggesting a failure of the thin barrier due to Cu diffusion through the barrier. We are confident that the formation of a continuous nanocrystalline ZrN film in a uniform fashion in a stable phase with a slightly nitrogen-rich composition is a cause of the excellent features obtained. The formation process of the ZrN film is discussed in terms of the nucleation process of reactive sputtering at a low deposition temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-05-25
著者
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Aoyagi Eiji
Institute For Materials Research Tohoku University
-
Sato Masaru
Department Of Applied Chemistry School Of Advanced Science And Engineering Faculty Of Science And En
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Atsushi Noya
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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Mayumi B.
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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