Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC
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概要
- 論文の詳細を見る
As an extremely thin diffusion barrier applicable to Cu interconnects for the 45 nm technology nodes, we propose a barrier material without interface layers that can become a cause of barrier consumption owing to solid-phase reaction and/or intermixing. We examine the barrier properties of a reactively sputtered ZrN barrier as thin as 5 nm between Cu and SiOC. The ZrN barrier with a slightly N-rich composition tolerates annealing at 500 °C for 30 min. Transmission electron microscopy indicates the absence of interface layers adjoining the barrier. Using the ZrN barrier, we can demonstrate the effectiveness of the interface-layer-free characteristics for an extremely thin barrier of high performance.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-01-25
著者
-
Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
-
Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
-
Aoyagi Eiji
Institute For Materials Research Tohoku University
-
Sato Masaru
Department Of Applied Chemistry School Of Advanced Science And Engineering Faculty Of Science And En
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